• Electrical Engineering Archive: Questions from 2023-01-29

    Consider the MOS device shown in the picture below. a) Consider that VGS > VT of the transistor. In which region of operation is the MOSFET operating? b) Given transistor parameters VT = 0.8 V and beta = 0.1 mA/V2, find out VGS and ID.
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    Consider the circuit shown below. VDD = 1010 V, R1 = 2.12 kohm, R4 = 4.64 kohm, C1 = 15 uF. The MOSFET has a threshold voltage Vth of 0.62 V, beta = 50.750 mA/V2 What is the value for gm assuming that the DC quiescent value of vo is 4.44 V ? Give your answer in units of mA/V, to 1 decimal place.
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    Consider the circuit shown below. VDD = 910 V, R1 = 2.22 kohm, R4 = 4.14 kohm, C1 = 13 uF. The MOSFET has a threshold voltage Vth of 0.92 V, beta = 54.850 mA/V2 What is the value for gm assuming that the DC quiescent value of vo is 4.84 V ? Give your answer in units of mA/V, to 1 decimal place.
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    Consider an n-channel MOSFET with threshold voltage 1.3 V, electron mobility of 488 cm2/Vs, gate oxide thickness of 6 nm, gate oxide permittivity of 2.1
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