Electrical Engineering Archive: Questions from 2023-02-6

In the CMOS inverter circuit shown if the transconductance parameters of nMOS and nMOS transistor are Kn = Kp = 40 uA/V2 and threshold voltages are Vthn = |Vthp| = 1 V the drain current of Mp is

For the CMOS inverter circuit shown below, with the given transistor parameters, determine the input voltage V1 for an output voltage of Vo = 4.8V.

In an ideal CMOS inverter, VOH is equal to VDD. However, the NMOS leakage may slightly reduce VOH. In this problem, we want to calculate the VOH in the presence of NMOS leakage. To measure VOH, you connect the input to the ground, where the PMOS is in linear region and the NMOS is in cut off region. However, in the presence of leakage, you can approximate that the NMOS behaves like a current source with the current of IOFF(NMOS) as shown in the circuit below. Compute VOH, if IOFF(NMOS) = 1 uA, VDD = 1.0 V, Vtp = -0.4 V, K'p = -40 mu A/V2, and (W/L)p = 2.

The CMOS inverter in Fig. P7.5 has VDD = 1.8 V and VSS = 0 V. If VTN = -0.45 V, what are the regions of operation of the transistors for (a) VI = VL? (b) VI = VH? (c) VI = Vo = 1.65 V.

The inverter in the circuit below is a symmetric CMOS inverter, with the following parameters: VDD = 5.0 V K = 1/6 mA/V^2 Vt = 2.0 V. Using any valid simplifying approximation, determine the values for V0 and I.