Consider the pMOS current mirror circuit shown in Figure 4. Assume that the transistors are identical in all parameters. Do not ignore channel length modulation. Show that IX/IB ≈ 1 + |λp|(VG - VX) where VG is the common gate voltage.
Consider a CMOS inverter with Vdd = 3.3 V. Please be careful with units. The NMOS transistor has the following characteristics. The channel length is 20 nanometers. For NMOS, Oxide thickness = 5 Angstroms, Threshold Voltage = 0.12 V, mobility = 580 cm^2/V-sec, transistor W = 80 nm. For PMOS, all parameters are the same as NMOS except up = 220 cm2/N-sec. (a) (4pts) compute beta_n in units of [A/V^2]. (b) (4pts) compute the resistance Rn of the inverter. (c) (4pts) compute the resistance Rp of the inverter. (d) (4pts) what is the value of noise margin high (NMH) of the inverter? Assume the CMOS inverter has VDD = 3.3 V, VIL = 0.45 V, VIH = 0.92 V, VOL = 0.12 V and VOH = 2.9 V. (e) (4pts) compute the maximum operating frequency of the inverter when the rise and fall times are equal with a value of 0.1 ns each.
The foundry has delivered a new mystery NMOS FET to your lab. You only know the width and length of the device: W/L = 0.18 um/10 um You also know that the threshold voltage is positive, but you don't know its value. You need to figure out the parameters: unCox, VTH, lambda You make the following measurement of the device's small-signal transconductance (gm) and the drain current (Ids) : Measurement 1: Ids = 1.50 mA and gm = 8.6 mS when Vgs = 1.0 V and Vds = 1.0 V Is the transistor in the saturation or triode region for Measurement 1 ? saturation triode Find the threshold voltage VTH To find ?, you make another measurement at a different value of Vds : Measurement 2: Ids = 1.60 mA when Vgs = 1.0 V and Vds = 1.8 V Find the value of ?, using Measurement 1 and 2 . Find the value of unCox.
he foundry has delivered a new mystery NMOS FET to your lab to characterize. They only gave you the width and length of the device: W 10?m L 0.18um = You also know that the threshold voltage is positive, but you don't know its value. You need to figure out the other parameters: Un Cox, Vth, a You make the following measurements: Measurement 1: Ids = 1.055 mA when Vgs = 1.0V and Vds = 2.0V Measurement 2: Ids = 15.694 mA when Vgs = 2.0V and Vds = 2.0V Measurement 3: Ids = 0.953 mA when Vgs = 1.0V and Vds = 1.0V a) Indicate whether the MOSFET is in saturation or triode region for each of these measurements. Measurement 1: Measurement 2: Measurement 3: b) Find the threshold voltage, using Measurements 1 and 2. c) Find the value of 1, using Measurements 1 and 3. d) Find the value of un Cox