A Pseudo-NMOS inverter is realized in a 0.13 - um fabrication process technology. It has VDD = 1.2 V, Vtn = Vtp = 0.4 V : (a) Specify the value of VOH. (Ans. 1.2 V) (b) If kp = 100 uA/V2, solve for ID of the closed state of the switch. (Ans. 32 uA ) (c) Calculate the average power dissipation assuming that the inverter life-time is divided equally between its two states. (Ans. 19.2 uW ) (d) If V0L is required to be 0.1 V, find the corresponding kn and the transconductance ratio r. (Ans. 400 uA/V2, 4)
Find VDSQ, VDSmin and VDSmax for the circuit when the characteristic of the nMOS is given as in the curve. ( important note: please do not care the black points and the dashed lines on the curve).
The MOSFET in the amplifier circuit of Fig. P7.124 has Vt = 0.6 V and kn = 5 mA/V^2. We shall assume that VA is sufficiently large so that we can ignore the early effect. The input signal vsig, has a zero average. It is required to bias the transistor to operate at an overdrive voltage Vov = 0.2 V. What must the dc voltage at the drain be? Calculate the dc drain current ID. What value must R_D have? Calculate the value of gm at the bias point. Use the small-signal equivalent circuit of the amplifier to show that
Consider the circuit shown in Figure 2 below. Here, VDD = 3.3 V, ideal current source Ibias = 100 uA, load resistor RL = 1 kohm, and PMOS devices M1 and M2 have the following properties: - W1 = W2 = 10 um - L1 = L2 = 0.5 um - upCox = 50 uA/V2 - VT0 = -800 mV - channel length modulation coefficient lambda_p = 0.02 V^-1 - body effect coefficient gamma_p = 0.5 V^1/2 Determine the following: a) the numerical value of node voltage VL b) the numerical value of load current IL.