For this circuit, when Us = 10 V, K = 0.5 mA/V2, UT = 1 V,RL = 9 kohm, RON = 1 kohm, find out the working region of MOSFET when uGS = 5 V and uGS = 1.5 V. (6 points) (b) For this circuit, when Us = 10 V, K = 0.5 mA/V2, UT = 1 V, RL = 9 kohm, uGS = UGS+uGS (Note: uGS = 1.5 V is the DC bias voltage and uGS is the small signal to be amplified.). Calculate uDS using the nonlinear analysis methods. ( 9 points) Hint: Here, when MOSFET works at the saturation region, iDS = K(uGS - UT)^2
NMOS and PMOS devices with drains, source, and gate ports annotated. Determine the mode of operation (saturation, triode, or cutoff) and drain current ID for each of the biasing configurations given below. Use the following transistor data: NMOS: kn' = 60 uA/V2, VT0 = 0.7 V, lambda = 0.1 V-1, VGS = 3.3 V, VDS = 3.3 V PMOS: kp' = 20 uA/V2, VT0= -0.8 V, lambda = 0.1 V-1, VGS = -0.5 V, VDS = -1.5 V Assume (W/L) = 1.
A set of I-V characteristics for an nMOS transistor at room temperature is shown for different biasing conditions. Figure P3.7 shows the measurement setup. Using the data, find : (a) the threshold voltage VT0 and, (b) velocity saturation vsat. Some of the parameters are given as: W = 0.6 um, EcL = 0.4 V, lambda = 0.05, tox = 16 A, |2phiF| = 1.1 V.