D 5.45 For the circuit in Fig. E5.10, assume that Q1, and Q2, are matched except for having different widths, W1, and W2. Let Vt = 0.5 V, kn' = 0.4mA/V
For the circuit in Fig. E5.9, find the value of R that results in VD = 0.7 V. The MOSFET has Vtn = 0.5V, unCox = 0.4 mA/V^2, W/L = 0.72 um/0.18 um, and lambda = 0. Ans. 34.4 k ohm
Another MOSFET Q2 is added to the circuit of question one as shown below. Both Q1 and Q2 are identical with Vth = 0.5 V, unCox = 0.4 mA/V^2, and W / L = 4. Find the value of R2 that results in Q2 to operate at the edge of the saturation region.
D5.10 Figure E5.10, shows a circuit obtained by augmenting the circuit of Fig. E5.9 considered in Exercise 5.9 with a transistor Q2 identical to Q1 and a resistance R2. Find the value of R2 that results in Q2 operating at the edge of the saturation region. Use your solution to Exercise 5.9.
Apply the operation mode of the differential amplifier at Fig 1 to calculate the circuit outcomes iD1, iD2, VDS1 and VDS2. Consider, kn1 = 1/2kn2 = 0.5 mA/V^2. Calculate the iD1, iD2, VDS1 and VDS2 of the differential amplifier of Fig. 13. Consider kn1 = 1/2kn2 = 0.5 mA/V^2.
Consider an NMOS transistor fabricated in a 0.18-um process with L = 0.18 um and W = 2 um. The process technology is specified to have tox = 4nm, un = 450 cm^2/V-s and Vtn = 0.5V. Find the current ID and VDS considering the MOSFET is working at the boundary of saturation region with VGS = 0.72V. Now it is observed that if VDS increases MOSFET current ID also increases to a value of 200uA due to a change in channel length, determine the new length of the channel.