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  • Electrical Engineering Archive: Questions from 2023-08-6

    3) For an n-channel MOSFET with tox = 10nm, L = 1.0μm, W = 10μm, Lov = 0.05μm, Csb0 = Cdb0 = 10fF, V0 = 0.6V, VSB = 1V, and VDS = 2V, Eox = 3.9, calculate the following capacitances when the transistor is operating in saturation: Cox, Cov, Cgs, Cgd, Csb, and Cdb. 4) Calculate fT for the n-channel MOSFET whose capacitances were found in the problem 3 above. Assume operation at 100uA, and that kn' = 160μA/V^2.

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    D 7.66 A common-source amplifier uses a MOSFET operated at Vov = 0.2 V. The amplifier feeds a load resistance RL = 10 kohm. The designer selects RD = 2RL. If you are required to realize an overall voltage gain Gv of -10 V/V what gm do you need? Specify the bias current ID. If, to increase the output signal swing, RD is reduced to RD = RL, what does Gv become?

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