Given an NMOS transistor whose source terminal is connected to the ground, with acceptor concentration 1018 cm-3 in the body, compute a. the body coefficient b. the threshold voltage for VB = -0.11 V i.e. reverse body-bias (RBB) condition (1 point) c. the threshold voltage for VB = +0.11 V i.e. forward body-bias (FBB) condition. Note: 2lambda = 0.18 um is a convention used to represent transistor dimensions in terms of the technology length lambda. This is different from channel length modulation parameter. Sizing is shown in the form of W/L and as a factor of transistor feature size i.e. 2lambda. Assume long-channel device.
Assume the drain current of M1 is I1, and the current source IS = 0.75I1. (3) For Fig. 2b, which region does M2 work in? (4) For Fig. 2b, Provide a symbolic expression for the small-signal gain of the amplifier using Vov 1 and Vov2 , which are the overdrive voltage of M1 and M2, respectively. (5) What is the advantage of the amplifier in Fig. 2(b) over Fig. 2(a)?