Q1: (a) Choose VB such that M1 is 200mV away from the triode (linear) region. Assume Vtn = 0.5 V, unCox = 200 uA/V2, and VDD = 2.5 V ID1 = ID2 = 0.5 mA,( W/L)1 = 80u/5u, (W/L)2 = 40u/5u, and Rd = 1 kohm hint: gm = 2unCox(W/L)ID = 2ID/VGS-Vth Q1: (b) Calculate the small signal voltage gain Assumptions remain the same as Q1(a) Q1: (c) Using the value of VB from part (a), calculate the maximum output voltage swing that keeps both transistors in saturation. Assumptions remain the same as Q1(a).
Figure 1 shows a 45 nm nMOS transistor. Assume Wn = 1 um and L = 45 nm. Assume the body of the transistor is connected to ground, VB = 0 V. a) Assume VD = VG = 1 V. Calculate the following; 1) Drain current, ID 2) Small-signal parameters, gm and gds 3) On-voltage (overdrive voltage), VON b) Assume VD = 0.1 V and VG = 0.6 V. Calculate the drain current, ID c) Calculate CGS, CGD, and CDB for VD = VG = 1 V. Assume that body (substrate) of the transistor is grounded.