An NMOS transistor has parameters VTN = 0.4 V, kn’ = 100 μA/V2, and λ = 0.02 V-1. (a) (i) Determine the width-to-length ratio W/L such that gm = 0.5 mA/V at IDQ = 0.5 mA when biased in the saturation region. (ii) Calculate the required value of VGSQ. (b) Repeat part (a) for IDQ = 0.15 mA.
A PMOS transistor has parameters VTP = -0.6 V, kp’ = 40 μA/V2, and λ = 0.015 V-1. (a) (i) Determine the width-to-length ratio (W/L) such that gm = 1.2 mA/V at IDQ = 0.15 mA. (ii) What is the required value of VSGQ? (b) Repeat part (a) for IDQ = 0.50 mA.
An NMOS transistor is biased in the saturation region at a constant VGS. The drain current is ID = 3 mA at VDS = 5 V and ID = 3.4 mA at VDS = 10 V. Determine λ and ro.
The minimum value of small-signal resistance of a PMOS transistor is to be ro = 100 kΩ. If λ = 0.012 V-1, calculate the maximum allowed value of ID.
An n-channel MOSFET is biased in the saturation region at a constant VGS. (a) The drain current is ID = 0.250 mA at VDS = 1.5 V and ID = 0.258 mA at VDS = 3.3 V. Determine the value of λ and ro. (b) Using the results of part (a), determine ID at VDS = 5 V.
The value of λ for a MOSFET is 0.02 V-1. (a) What is the value of ro at (i) ID = 50 μA and at (ii) ID = 500 μA? (b) If VDS increases by 1 V, what is the percentage increase in ID for the conditions given in part (a)?
A MOSFET with λ = 0.01 V−1 is biased in the saturation region at ID = 0.5 mA. If VGS and VDS remain constant, what are the new values of ID and ro if the channel length L is doubled?
The parameters of the circuit in Figure 4.1 are VDD = 3.3 V and RD = 5 kΩ. The transistor parameters are kn’ = 100 μA/V2, W/L = 40, VTN = 0.4 V, and λ = 0.025 V−1. (a) Find IDQ and VGSQ such that VDSQ = 1.5 V. (b) Determine the small-signal voltage gain.
The circuit shown in Figure 4.1 has parameters VDD = 2.5 V and RD = 10 kΩ. The transistor is biased at IDQ = 0.12 mA. The transistor parameters are VTN = 0.3 V, kn’ = 100 μA/V2, and λ = 0. (a) Design the W/L ratio of the transistor such that the small-signal voltage gain is Av = -3.8. (b) Repeat part (a) for Av = -5.0.
For the circuit shown in Figure 4.1, the transistor parameters are VT N = 0.6 V, kn’ = 80 μA/V2, and λ = 0.015 V-1. Let VDD = 5 V. (a) Design the transistor width-to-length ratio W/L and the resistance RD such that IDQ = 0.5 mA, VGSQ = 1.2 V, and VDSQ = 3 V. (b) Determine gm and ro. (c) Determine the small-signal voltage gain Av = vo/vi.
Consider the design of a CMOS compound OR-AND-INVERT (OAI21) gate computing F = (A + B) ∙ C. a) sketch a transistor-level schematic b) sketch a stick diagram c) estimate the area from the stick diagram d) layout your gate with a CAD tool using unit-sized transistors e) compare the layout size to the estimated area
A depletion-type nMOS transistor has the following device parameters: µn = 500 cm2/V-s tox = 345 A |2ΦF| = 0.84 V W/L = 1.0 Some laboratory measurement results of the terminal behavior of this device are shown in the table below. Using the data in the table, find the missing value of the gate voltage in the last entry. Show all of the details of your calculation.
Consider the circuit in Fig P3.3-6. It is a series connection of n MOSFET transistors. Each transistor has the same width, W, but each transistor can have a different length, L. Derive an expression for W and L for a single transistor that replaces, and is equivalent to, the multiple series transistors. When using the simple model, you must ignore body effect.
Consider the circuit shown in Figure 2 below, with gm1 = 100 mA/V, gm2 = 20 mA/V, gm3 = 3 mA/V, R1 = 2 kΩ, R2 = 1 kΩ, VDD = 5 V, and all NMOS devices are in saturation. Channel length modulation and the body effect should be ignored for this problem. (And, hopefully, it is obvious that gm1, gm2, and gm3 correspond to the device transconductances of NMOS devices M1, M2, and M3, respectively: if this wasn't obvious, note that the next time you see something like this, I probably won't spell it out for you so explicitly. if at all, so please make a mental note of these kinds of things.) a) Determine the numerical small-signal voltage gain: i) Av = Vout/Vin in units of V/V and ii) |Av| in units of dB. Be sure to indicate whether your numerical answers are positive-valued or negative-valued (numerical answers with ambiguous signs will receive little, if any: credit, partial or otherwise). List your numerical answers in proper engineering notation format with appropriate units, and show your work. b) Determine the numerical small-signal resistance "seen" looking into node Vin. List your numerical answer in proper engineering notation format with appropriate units, and show your work. c) Determine the numerical small-signal resistance "seen" looking into node Vx. List your numerical answer in proper engineering notation format with appropriate units, and show your work. d) Determine the numerical small-signal resistance "seen" looking into node Vy. List your numerical answer in proper engineering notation format with appropriate units, and show your work. e) Determine the numerical small-signal resistance "seen" looking into node Vout. List your numerical answer in proper engineering notation format with appropriate units. and show your work.
Consider the circuit in Fig P3.3-5. It is a parallel connection of n MOSFET transistors. Each transistor has the same length, L, but each transistor can have a different width, W. Derive an expression for W and L for a single transistor that replaces, and is equivalent to, the multiple parallel transistors.
Consider the design of a CMOS compound OR-OR-AND-INVERT (OAI22) gate computing F = (A + B) ∙ (C + D). a) sketch a transistor-level schematic b) sketch a stick diagram c) estimate the area from the stick diagram d) layout your gate with a CAD tool using unit-sized transistors e) compare the layout size to the estimated area
Consider the circuit shown in Fig. P1.13, where is a dc signal of 1 V. Taking into account only the channel charge storage, determine the final value of when the transistor is turned off, assuming half the channel charge goes to . You may use the parameters for the CMOS processes in Table 1.5.
An op amp with parameters as listed is used in the circuit shown above. In this question, calculate the worst-case maximum error voltage, VO,ERROR, at the output due to the input bias currents only: OV ± 198mV ± 126mV ± 99mV Op-amp Parameters: AOL = ∞ V/V VOS = 12.5 mV IB = 4 0nA IOS = 10 nA ft = 2 MHz
Find the capacitances Cgs, Cgd, Cdb, and Csb for an active n-channel transistor having doping concentrations of ND = 10^26 atoms/m3 and NA = 10^23 atoms/m3 with W = 15 μm, L = 0.5 μm Assume that the source and drain junctions extend 1 μm beyond the gate, resulting in source and drain areas being As = Ad = 15 μm and the perimeter of each being Pa = Pd = 32 μm.
An nMOS transistor is fabricated with the following physical parameters: ND = 10^20 cm-3 NA(substrate) = 10^16 cm-3 N+ A(chan. stop) = 10^19 cm-3 W = 10 µm Y= 5 m L = 1.5 µm LD = 0.25 µm Xj = 0.4 µm (a) Determine the drain diffusion capacitance for VDB = 5 V and 2.5 V. (b) Calculate the overlap capacitance between gate and drain for an oxide thickness of tox = 200 A°.
The op amps in the figure are assumed to be ideal devices. Find the input resistance, Rin, as defined on the figure above. Infinity 10 kΩ 100 kΩ 20 kΩ 5kΩ.
A dynamic register circuit with its CLKG signal is shown below. (a) How can you tell this a dynamic register? Describe an advantage and a disadvantage of the dynamic register over a static register. (b) Describe and explain the activities at nodes X and Q, respectively, during the narrow interval when the CLKG is High. (c) Describe and explain the activities at nodes X and Q, respectively, when the CLKG is Low. (d) With reference to the CLKG signal, what is the hold time for the input D? (e) Design a static CMOS circuit to generate the CLKG signal, which is a chain of narrow pulses corresponding to the rising edges of the input clock signal CLK.
Given that the NMOS FET in the following Circuit has the following characteristics: Vgs( Threshold ) = 1.7 V VA = -3800 V ro = 3.7 MΩ What value of Rx is required to get a nominal gain of -10? Find the gate voltage.
The op amps in the figure are assumed to be ideal devices. In this question, find the voltage gain, vO/vl, of the circuit. +9 V/V +10 V/V -5V/V -10V/V -9V/V.
An op amp with parameters as listed is used in the circuit shown above. Calculate the worst-case maximum error voltage, VO ERROR, at the output due to the input offset voltage only: 0 V ± 75mV ± 60mV ± 10 mV ± 30 mV Op-amp Parameters: AOL = ∞ V/V VOS = 5 mV IB = 50 nA IOS = 10 nA ft = 2 MHz.
Comparison of static CMOS and Φ-N/Φ-P network dynamic logic: Implement the following logic function Y = A + B ∙ C with 3 different logic architectures: static CMOS, Φ-N network dynamic logic, Φ-P network dynamic logic. 1). Plot the schematic design of your circuit implementation for the 3 architectures respectively. 2). Assume Vdd = 5 V, Gnd = 0 V, clock period TΦ = 100 ns. For the given input pattern sequence ABC = P1 → P2 → P3 → P4, where P1, P2, P3 and P4 are 3-bit binary codes of the last 4 digits of your student ID. For example, if your student ID is: 1234567, then P1 = "4" = 100, P2 = "5" = 101, P3 = "6" = 110, P4 = "7" = 111. For digit "8 ", use ABC = 000; for digit " 9", use ABC = 001. For above four input patterns, roughly sketch the output waveform of inputs and VY for 3 different architecture designs in Figure 3. How are they different from each other? 3). Fill the table 1 for the values of output voltage VY for the given input pattern sequence.
Using the parameters given below, calculate the current through two nMOS transistors in series (see Figure P3.11), when the drain of the top transistor is tied to VDD, the source of the bottom transistor is tied to VSS = 0 and their gates are tied to VDD. The substrate is also tied to VSS = 0 V. Assume that W/L = 10 for both transistors. k’ = 25 µA/V2 VT0 = 1.0 V γ = 0.39 V1/2 |2ΦF| = 0.6 V Hint: The solution requires several iterations, and the body effect on threshold voltage has to be taken into account. Start with the KCL equation
A 3-input majority gate returns a true output if at least two of the inputs are true. A minority gate is its complement. Design a 3-input CMOS minority gate using a single stage of logic. a) sketch a transistor-level schematic b) sketch a stick diagram c) estimate the area from the stick diagram
A carry lookahead adder computes G = G3 + P3(G2 + P2(G1 + P1G0)). Consider designing a compound gate to compute G. a) sketch a transistor-level schematic b) sketch a stick diagram c) estimate the area from the stick diagram
An NMOS transistor, operating in the triode region with vDS = 1 V, is found to conduct 0.6 mA for vGS = 2 V and 1.6 mA for vGS = 4 V. a) What is the apparent value of threshold voltage V1? b) If kn’ = 0.5 mA/V2, what is the device W/L ratio? c) What current would expect to flow with vGS = 3 V and vDS = 0.15 V? d) If the device is operated at with vGS = 2.25 V, at what value of vDS will the drain end of the MOSFET channel just reach pinch off, and what is the corresponding drain current?
The following parameters are given for an nMOS process: tox = 500 A° substrate doping NA = 1∙10^16 cm-3 polysilicon gate doping ND = 1∙10^20 cm-3 oxide-interface fixed-charge density N = 2∙10^10 cm-3 (a) Calculate VT for an unimplanted transistor. (b) What type and what concentration of impurities must be implanted to achieve VT = +2 V and VT = -2 V?
For the same circuit as in Problem 1.13, the input voltage has a step voltage change at time 0 from 0.2 V to 0.4 V (the gate voltage remains at 1.8 V). Find its 99 percent settling time (the time it takes to settle to within 1 percent of the total voltage change). You may ignore the body effect and all capacitances except CL. Repeat the question for changing from 0.6 V to 0.8 V.
In this question, an op amp is used to amplify the audio output from a music player and drive a pair of headphones, as shown. Find the maximum circuit gain (vo/vi) that can be used while simultaneously achieving a circuit 3-dB bandwidth of at least 100 kHz. 20 V/V 50 V/V 100 V/V 75 V/V 10 V/V Op-amp parameters: Ao = 2x10^5 V/V ft = 10 MHz Slew Rate = ∞ V/µs vo max = ± 14V