• Electrical Engineering Archive: Questions from 2023-12-12

    (Based on Neamen, Problem 10.45) The experimental characteristics of an ideal n channel MOSFET biased in the saturation region are shown in the figure. If W/L = 10 and tox = 42.5 nm, determine VT and μn. Assume the oxide material is silicon dioxide.
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    The measured characteristics of an n-channel MOSFET, biased in saturation, are shown below. If W/L = 10 and tox = 42.5 nm, determine the following: a) the threshold voltage, VT b) the average electron mobility in the channel, un c) the transconductance, gmSat, at Vgs = 1 and 3 volts.

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