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  • Electrical Engineering Archive: Questions from 2024-04-3

    Let VDS be the voltage drop from the Drain to the Source of the MOSFET shown. Which one of the following equations for the drain current is correct? a. ID = k(VDD − VDS)/RD b. ID = k(VDD + VDS)/RD c. ID = k(VDS − VT)2 d. ID = (VDD − VDS)/RD e. ID = (VDD − VDS)/(kRD)

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    An NMOS transistor's iv curves are shown below with VT = 3 V and k = 10 mA/V2. In the active region, its drain current is ID = k(VGS − VT)2. a. If VGS = 6 V, then find ID. b. Now, assume ID = 50 mA. If VDD = 10 V and VDS = 5 V, find the drain resistor value, RD. c. Now, let VGS = 5 V, VT = 3 V, VDD = 10 V and RD = 125 ohms, draw a loadline on the iv curve above and indicate the operating point with a dot. Specify the operating point: ID = mA VDS = V

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    For the circuit given below, determine the value of R so that two noise margin values become equal to each other. Calculate the noise margins with your design.

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    The 2 input CMOS gate shown on the left implements the Boolean expression: C = A + B. On the right, this gate design has been modified by adding a PMOS and an NMOS transistor to the A input. a. Fill in the truth table so that it correctly represents this new logic circuit. b. Find the Boolean expression for C for the circuit on the right and enter it in the box.

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