Transistor M1 in the circuit shown in Fig. (7), has the following characteristics: VTH = 1 volt, K = 2 mA/V2, λ = 0.01 V−1. Given VDD = 10 volt, RL = 10 kΩ and C1 = C2 = ∞. a. Design the circuit to have the following specifications: input resistance Rin = 100 kΩ, ID = 2 mA. (Provide values for R1, R2, and RD). b. Determine the output resistance, Ro. c. Determine the maximum undistorted peak to the peak output voltage. (15 marks) Answer Q3-2 Fig. 7
The MOSFET of Fig. 4-18 is characterized by VT = 4 V and ID( on ) = 10 mA. Let iG≈0, R1 = 0.4 MΩ, R2 = 5 kΩ, RS = 0, RD = 2 kΩ, and VDD = 20 V. (a) Find the exact change in IDQ when the MOSFET is replaced with a new device characterized by VT = 3.8 V and ID(on) = 9 mA. (b) Find the change in IDQ predicted by sensitivity analysis when the original device is replaced as in part a.