Assume our usual nMOS model where: Ohmic region ID = kVDS(VGS−VTH) when VDS < VGS−VTH Active region ID = k(VGS−VTH)2 when VDS ≥ VGS−VTH Consider the following circuit and the family of IV characteristic curves. MOSFET Current-Voltage Characteristics You are given that VTH = 1 V, VDD = 3 V, and RD = 33.3 Ω. Use the ID−VDS characteristics to find the transistor parameter k and the value of VGS that produces VDS = 0.75 V. k = number (2 significant figures) ⏟mA/V2 VGS = number (2 significant figures) ? ? number (2 significant figures) V
II. (20 points) For the circuit in Fig. 5, find the value of R that results in VD = 1 V. The PMOS transistor has Vtp = −0.5 V, upCox = 100 uA/V2, W/L = 7.2 um/0.18 um, and λ = 0. Fig. 5
III. (20 points) Logic gate design at transistor level:Find the Pull-down network (PDN) that corresponds to the Pull-up network (PUN) shown in Fig. 6. Draw the complete CMOS logic circuit using the PUN and PDN. 3) Find the logic function for the circuit you derived in 2). Fig. 6
#5. In the op-amp below, (W/L)1−8 = 80 /0.5, VDD = 2.5 V and Iss = 1 mA. Use same parameters as in problem #1. a) What common-mode (CM) level must be established at the drains of M3 and M4 so that ID5 = ID6 = 1 mA? How does this constrain the maximum input CM level? b) With the choice made in part a), calculate the overall voltage gain and the maximum and minimum output voltages.
Consider a contact between a metal and an p-type Silicon with Na = 1.3×1016 cm−3 at T = 300 K. Calculate the built-in potential barrier in the metal-semiconductor diode for a -3 V applied bias. Given: metal work function 5.38 eV, electron affinity for Silicon 4.01 eV, and ni = 1.5×1010 cm−3. Answer: The correct answer is: 2.53
(a) Show that the system of differential equations for the currents i2(t) and i3(t) in the electrical network shown in the figure below is L1di2 dt + Ri2 + Ri3 = E(t)L2di3 dt + Ri2 + Ri3 = E(t) (i) By Kirchhoff's first law we have the following relationship between i1, i2, and i3. i1 = By applying Kirchhoff's second law to the i1, i2 loop, we obtain the following. E(t) = ()i1+()i2′ By applying Kirchhoff's second law to the i1, i3 loop, we obtain the following. E(t) = ()i1+()i3′ Writing i1 in terms of i2 and i3 and rearranging terms, one obtains the given system. (b) Solve the system in part (a) if R = 5 Ω, L1 = 0.02 h, L2 = 0.025 h, E = 100 V, i2(0) = 0, and i3(0) = 0. i2(t) = i3(t) = (c) Determine the current i1(t).
Q2) The circuit parameters for the three-transistor current source shown in the figure are as follows: V+ = 3 V V− = −3 V R1 = 30 kΩ For transistors 1 and 2; VBE1,2(ON) = 0.7 V and β1,2 = 120 For transistor 3; VBE3(ON) = 0.6 V and β3 = 80. Determine IREF, IO, IB1, IB2, IB3, IC1, IC2 and IE3.
The magnitude of the electric field between the two circular parallel plates in the figure is E = (6.0×104) − (5.6×106 t) with E in volts per meter and t in seconds. At t = 0, the field is upward. The plate area is 3.6×10−2 m2. For t > 0, what is the magnitude of the displacement current between the plates?
The figure below shows a battery connected to a circuit. The potential difference across the battery and the resistance of each resistor is given in the figure. (a) What is the magnitude of the potential difference (in V) between points a and b in the circuit? v (b) What is the current (in A) in the 20.0 Ω resistor? A
Problem 08.019 - The Thevenin equivalent network - DEPENDENT MULTI-PART PROBLEM - ASSIGN ALL THE PARTS Consider the following circuit. Assume R1 = 23 kΩ, R2 = 4.8 kΩ, VCC = 10 V, and Vdd = 15 V. NOTE: This is a multi-part question. Once an answer is submitted, you will be unable to return to this part. Problem 08.019. b - Currents through resistances Determine the current through both the resistances in the given circuit. The current in the two resistances is I = mA.
The rotating loop in an ac generator is a square 13.0 cm on a side. It is rotated at 40.0 Hz in a uniform field of 0.800 T. Calculate the following quantities as functions of time t, where t is in seconds. (a) the flux through the loop ΦB = mT⋅m2 (b) the emf induced in the loop ε = V (c) the current induced in the loop for a loop resistance of 2.00 Ω I = A (d) the power delivered to the loop P = W (e) the torque that must be exerted to rotate the loop τ = mN⋅m