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a) [2 marks] Determine the resistances, RI and R2, such that the bias current through the resistors is 1/10 of the drain current. For DC analysis, ignore channel length modulation, and assume that the MOSFET remains in saturation. b) [1 mark] Calculate the values of the small-signal parameters, gm and ro. c) [3 marks] Find the small-signal voltage gains, vx/vsig and vo/vsig. Vtp = −0.3 V, μpCox(W/L) = 1.2 mA/V2 and λ = −0.1 V−1. VSS = 3 V, I = 0.5 mA, Rsig = 2 kΩ, and RL = 10 kΩ.

a) [2 marks] Determine the resistances, RI and R2, such that the bias current through the resistors is 1/10 of the drain current. For DC analysis, ignore channel length modulation, and assume that the MOSFET remains in saturation. b) [1 mark] Calculate the values of the small-signal parameters, gm and ro. c) [3 marks] Find the small-signal voltage gains, vx/vsig and vo/vsig. Vtp = −0.3 V, μpCox(W/L) = 1.2 mA/V2 and λ = −0.1 V−1. VSS = 3 V, I = 0.5 mA, Rsig = 2 kΩ, and RL = 10 kΩ.

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V t p = − 0.3 V , μ p C o x ( W / L ) = 1.2 mA / V 2 and λ = − 0.1 V − 1 . V S S = 3 V , I = 0.5 mA , R s i g = 2 k Ω ,
and R L = 10 k Ω . a) [2 marks] Determine the resistances, R I and R 2 , such that the bias current through the resistors is 1 / 10 of the drain current. For DC analysis, ignore channel length modulation, and assume that the MOSFET remains in saturation. b) [1 mark] Calculate the values of the small-signal parameters, g m and r o . c) [3 marks] Find the small-signal voltage gains, v x v s i g and v o v s i g .

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