Question

Notify Me Bookmark

A simple form of a constant current circuit, known as a "beta multiplier," is shown in the figure. Neglect the Lambda effect. All devices are operating in saturation mode. μnCoxW/LN and μpCoxW/LP are both 8×10−3 A/V2. R1 = 500 Ω. VDD = 1 V. Vth, n = 0.30 V, Vth, p = −0.30 V What is the value of I1, and VGS1? The voltage value must be reasonable.

A simple form of a constant current circuit, known as a "beta multiplier," is shown in the figure. Neglect the Lambda effect. All devices are operating in saturation mode. μnCoxW/LN and μpCoxW/LP are both 8×10−3 A/V2. R1 = 500 Ω. VDD = 1 V. Vth, n = 0.30 V, Vth, p = −0.30 V What is the value of I1, and VGS1? The voltage value must be reasonable.

Image text
  1. A simple form of a constant current circuit, known as a "beta multiplier," is shown in the figure. Neglect the Lambda effect. All devices are operating in saturation mode. μ n C o x W / L N and μ p C o x W / L P are both 8 × 10 − 3 A / V 2 .
R 1 = 500 Ω . VDD = 1 V . V t h , n = 0.30 V , V t h , p = − 0.30 V
What is the value of I 1 , and V G S 1 ? The voltage value must be reasonable.

Detailed Answer

0 0

Please enter your email here. You will get email when this question is answered by our tutor.

Doubtrix Logo

Problem is not yet solved!

Click on Notify me to get email when question is answered.

Join Doubtrix with 7-days free trial

  • Icon Correct & Verified Answers
  • Icon No AI-Generated Answers
  • Icon Video Solution for Difficult Questions
  • Icon Work With Experts to Reach at Correct Answers
Notify me Login Sign Up

Similar/Related Questions

For all circuits, do not consider channel length modulation for calculating bias points. Unless otherwise specified, channel length modulation effect needs to be considered for small-signal analysis. All answers should be given to the second decimal place. Circuit and device parameters are: Vdd = 5 V;VTn = VTp = 1 V; μnCox = 50 μA/V2; μpCox = 25 μA/V2; λn = λp = 0.01 V−1; Lmin = 1 μm Figure 1 (for problems 1-3) Figure 2 (for problems 5-9) Figure 1: Transistor M1 has (W/L) = (160 μm/2 μm) and a bias current Iout = 2 mA. We desire M1 to be in saturation. You should assume λn = 0 for problems (1)-(3). Determine the ratio R1 /R2 required. 1 point Let VTn increase by 10% to 1.1 V. What is the new value of Iout in mA ? 1 point Let μnCox increase by 10% to 55 μA/V2. What is the new value of Iout in mA ? 1 point Figure 2: The circuit has Iref = 2 mA and Vp = 4 V. Transistors M1, M2 and M3 have (W/L) = (80 μm/1 μm). Determine the value of vx. (in volts) 1 point Determine the minimum allowable value of Vb (in volts) such that all devices are in saturation. 1 point Determine the maximum allowable value of Vb (in volts) such that all devices are in saturation. 1 point Determine Vb (in volts) such that vX = VY. 1 point determine the output resistance of this circuit ∂Vp/∂Iout in MΩ. 1 point Description for questions 9-10: An NMOS device with ID = 1 mA must operate in saturation with drain-source voltages as low as 0.5 V. The minimum required small-signal output impedance is 400 kQ. {Hint: You need to use the relations: rout = 1 /(λ⋅ID); λ⋅L = constant; and expression for VDS, sat = VGS−VT} Determine the length of the device in μm. 1 point Determine the width of the device in μm. 1 point

Solution
0 0

For all circuits, do not consider channel length modulation for calculating bias points. Unless otherwise specified, channel length modulation effect needs to be considered for small-signal analysis. All answers should be given to the second decimal place. Circuit and device parameters are: Vdd = 5 V; VTnn = VTp = 1 V; μnCox = 50 μA/V2; μpCox = 25 μA/V2; λn = λp = 0.01 V−1; Lmin = 1 μm Figure 1 (for problems 1-3) Figure 2 (for problems 5-9) Figure 1: Transistor M1 has (W/L) = (160 μm/2 μm) and a bias current Iout = 2 mA. We desire M1 to be in saturation. You should assume λn = 0 for problems (1)-(3). Determine the ratio R1 /R2 required. 1 point Let VTn increase by 10% to 1.1 V. What is the new value of Iout in mA ? 1 point Let μnCox increase by 10% to 55 μA/V2. What is the new value of Iout in mA ? 1 point Figure 2: The circuit has Iref = 2 mA and VP = 4 V. Transistors M1, M2 and M3 have (W/L) = (80 μm/1 μm). Determine the value of vx. (in volts) 1 point Determine the minimum allowable value of Vb (in volts) such that all devices are in saturation. 1 point Determine the maximum allowable value of Vb (in volts) such that all devices are in saturation. 1 point Determine Vb (in volts) such that VX = VY. 1 point determine the output resistance of this circuit ∂Vp/Iout in MQ. 1 point Description for questions 9-10: An NMOS device with ID = 1 mA must operate in saturation with drain-source voltages as low as 0.5 V. The minimum required small-signal output impedance is 400 kΩ. {Hint: You need to use the relations: rout = 1 /(λ⋅ID); λ⋅L = constant; and expression for VDS, sat = VGS−VT }Determine the length of the device in μm. 1 point Determine the width of the device in μm. 1 point

Solution
0 0

The transistors have the following characteristics: nMOS: Vtn = 0.5 V, Kn′ = 400 μA/V2; pMOS: Vtp = −0.5 V, Kp′ = 100 μA/V2; Also assume the pMOSsQ3 and Q4 are identical and the nMOSsQ2 and Q5 are identical. VDD = 2.5 V and −VSS = −1 V. The required currents are ID = 100 μA and IREF = 50 μA. Also, the output voltage should be allowed to swing up to 2.3 V. (a) (i)Find the (W/L) ratio of all transistors and (ii) the resistor R. (25 points). (b) Show a clean and labeled small signal equivalent circuit with the values shown in the diagram. (10 points) (c) If all transistors have |λ| = 0.02 V−1, find the small signal gain vo/vin , Rin and Rout. . (10 points). (d) What is the minimum value of vO so that the transistor remains in saturation (5 points).
Solution
0 0