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The MOSFET and BJT in the adjacent circuit has the following parameters, k = 5 mA/V^2, VT= 0.7 V, beta = 85, VBE(Active) = 0.7 V, VBE(Saturation) = 0.8 V, VCE(Saturation) = 0.2 V a) Determine IB and I2. [CO2] 2 b) Determine IC. [CO2] 3 C) Determine IDS and I1. [CO2] 3

The MOSFET and BJT in the adjacent circuit has the following parameters, k = 5 mA/V^2, VT= 0.7 V, beta = 85, VBE(Active) = 0.7 V, VBE(Saturation) = 0.8 V, VCE(Saturation) = 0.2 V a) Determine IB and I2. [CO2] 2 b) Determine IC. [CO2] 3 C) Determine IDS and I1. [CO2] 3

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The MOSFET and BJT in the adjacent circuit has the following parameters, k = 5 mA/V^2, VT= 0.7 V, beta = 85, VBE(Active) = 0.7 V, VBE(Saturation) = 0.8 V, VCE(Saturation) = 0.2 V a) Determine IB and I2. [CO2] 2 b) Determine IC. [CO2] 3 C) Determine IDS and I1. [CO2] 3

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